Biomedical & IoT Integrated Communications and Sensing Laboratory

Aluminum Nitride (AlN) is a well-established thin film piezoelectric material. Recently, the substitutional doping of scandium (Sc) for aluminum (Al) to form aluminum scandium nitride (AlScN) has been studied to significantly enhance the piezoelectric properties and to introduce ferroelectric properties into AlN based material systems. The properties achieved have profound implications for the performance of future 5G and 6G RF filters, piezoelectric sensors, piezoelectric energy harvesters, and for scaling the bit density of ferroelectric nonvolatile memories. Our group studies the synthesis of highly Sc doped AlScN materials of the thickness and quality needed for applications in memory and microelectromechanical systems (MEMS). The main focus of our research group can be divided into three parts: AlScN Ferroelectrics, AlScN Piezoelectric Devices, and Multiferroic Devices.

AlScN Ferroelectrics

Contacts: Jeffrey Zhang, Adzo Fiagbenu, Dr. Paria Gharavi

AlN and AlScN Piezoelectric Devices

Contacts: Zichen Tang, Xingyu Du, Anne-Marie Zaccarin, Rossiny Beaucejour, Dr. Ahmed Mohammed, Dr. Shangyi Chen

Multiferroic Devices

Contacts: Michael D’Agati, Sydney Sofronici, Baha Bachnak, Yujia Huo